High tunable BaSnxTi1-xO3 thin films for microwave applications. Issue 173 (23rd July 2016)

• Record Type: Journal Article
• Authors: Tumarkin, A. V.; Stozharov, V. M.; Altynnikov, A. G.; Gagarin, A. G.; Razumov, S. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.; Kozyrev, A. B.
• Is Part Of: Integrated ferroelectrics. Issue 173(2016)
• Page Start: 140
• Page End: 146
• Publication Date: 2016-07-23
• Subjects: Lead-free ferroelectrics -- Ba(Sn, Ti)O3 -- microwave applications -- tunability -- dielectric losses; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2016.1187055
• Languages: English
• ISSNs: 1058-4587

Abstract

ABSTRACT: Thin films of BaSnx Ti1-x O3 composition (Sn/Ti ≈50/50) are grown in-situ by RF magnetron deposition onto Pt/Ti/Al2 O3 substrate. Structural and dielectric properties are optimized by changing substrate temperature. Best thin-film samples have shown a high tunability (about 3.5) and low dielectric losses attractive for microwave electronics.