Cite
HARVARD Citation
Manikanthababu, N. et al. (2016). Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices. Radiation effects and defects in solids. 171 (1), pp. 77-86. [Online].
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Manikanthababu, N. et al. (2016). Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices. Radiation effects and defects in solids. 171 (1), pp. 77-86. [Online].