Effect of rapid magnetic field annealing in vacuum on the structure and magnetic properties of Ni-P films. Issue 170 (23rd March 2016)

• Record Type: Journal Article
• Authors: Li, Haiqin; Yuan, Jing; Mao, Duolu; Xie, Yulong; Ma, Yuanliang
• Is Part Of: Integrated ferroelectrics. Issue 170(2016)
• Page Start: 33
• Page End: 42
• Publication Date: 2016-03-23
• Subjects: Magnetic films -- crystal structure -- phase transitions; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2016.1165979
• Languages: English
• ISSNs: 1058-4587

Abstract

ABSTRACT: Ni-P thin films are deposited on silicon wafer by electroless method and treated by different annealing processes. The structure of as-deposited film exhibits the mixture of amorphous and microcrystalline phases, and the M s is 150 emu/cc and H c is 24 Oe. Rapid thermal annealing (RTA) could avoids the impurity and the M s of the sample reached the maximum value about 413 emu/cc after RTA process at 350°C. A magnetic field about 5000 Oe was applied during RTA process, which resulted in higher crystallization temperature, higher value of M s and lower value of H c .