A new strategy to prepare N-doped holey graphene for high-volumetric supercapacitors. Issue 25 (20th May 2016)

• Record Type: Journal Article
• Authors: Dong, Xinwei; Hu, Nantao; Wei, Liangming; Su, Yanjie; Wei, Hao; Yao, Lu; Li, Xiaolin; Zhang, Yafei
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 25(2016)
• Page Start: 9739
• Page End: 9743
• Publication Date: 2016-05-20
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6ta01406b
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : N-doped holey graphene with a volumetric capacitance of 397 F cm −3 for supercapacitors was prepared by a novel "Bottom-up" strategy. Abstract : N-doped holey graphene (N-HG) was successfully prepared by a novel "Bottom-up" strategy with scalable and low cost characteristics. The as-obtained N-HG possessed amounts of in-plane holes, a high specific surface area (1602 m 2 g −1 ), a high nitrogen content and could be easily stacked to form a high density carbon monolith which presented a maximum volumetric capacitance of 397 F cm −3 for supercapacitors.