High thermoelectric performance of In-doped Cu2SnSe3 prepared by fast combustion synthesis. (27th April 2016)

• Record Type: Journal Article
• Authors: Li, Yuyang; Liu, Guanghua; Li, Jiangtao; Chen, Kexin; Li, Laifeng; Han, Yemao; Zhou, Min; Xia, Mingjun; Jiang, Xingxing; Lin, Zheshuai
• Is Part Of: New journal of chemistry. Volume 40:Number 6(2016:Jun.)
• Page Start: 5394
• Page End: 5400
• Publication Date: 2016-04-27
• Subjects: Chemistry -- Periodicals; Chimie -- Périodiques; 540
• DOI: 10.1039/c5nj03345d
• Languages: English
• ISSNs: 1144-0546

Abstract

Abstract : In-doped Cu2 SnSe3 with ZT = 1.28 is produced by high-pressure combustion synthesis followed by spark plasma sintering. Abstract : Bulk In-doped Cu2 SnSe3 samples have been prepared by a fast, one-step method combining the synthesis and sintering process, named high-pressure combustion synthesis (HPCS), and they were also prepared by conventional spark plasma sintering (SPS) for comparison. The relative densities of the In-doped Cu2 SnSe3 samples are above 98%, a little higher than the 96% by SPS. The thermodynamic parameters and reaction kinetics of the HPCS process are investigated, showing the maximum combustion temperature of 708 K and combustion wave propagation velocity of 2 mm s −1 . The thermoelectric properties of the Cu2 Sn1− x In x Se3 samples (HPCS) with x ranging from 0 to 0.20 have been measured in the temperature range of 323–773 K. The electrical conductivity at 323 K is greatly enhanced by almost 6 times from 2.2 × 10 4 S m −1 to 12.9 × 10 4 S m −1 by the substitution of Sn with In ( x = 0.15). The maximum ZT reaches 0.56 at 773 K for the sample of x = 0.10, which is about 20% higher than that of the unadulterated sample. Compared with the samples prepared by HPCS-SPS, the maximum ZT reaches 1.28 at 823 K for the In doping content of x = 0.10, which is much higher than that for the HPCS samples, attributing to the much lower thermal conductivity caused by strong boundaries scattering. The combustion synthesis offers a fast and more efficient approach for the fabrication of Cu2 SnSe3 materials with reduced time and energy consumption.