Effect of Zr+F doping and vacuum annealing on the transparent conducting properties of ZnO thin films. (23rd February 2016)

• Record Type: Journal Article
• Authors: Ravichandran, K.; Rajkumar, P. V.; Sakthivel, B.; Manoharan, C.; Ravidhas, C.; Chinnappa, L.
• Is Part Of: Materials research innovations. Volume 20:Number 2(2016)
• Page Start: 106
• Page End: 111
• Publication Date: 2016-02-23
• Subjects: ZnO films -- Vacuum annealing -- Structural and Electrical studies; Materials -- Research -- Periodicals; Matériaux -- Recherche -- Périodiques; 620.1105
• DOI: 10.1179/1433075X15Y.0000000025
• Languages: English
• ISSNs: 1432-8917

Abstract

Abstract : Zr+F-doped zinc oxide (ZnO) thin films were prepared on preheated glass substrates (at a temperature of 200°C) by sol–gel spin coating method by keeping Zr doping level at 2 at.-% and varying the F doping level from 0 to 15 at.-% in steps of 5 at.-%. All the films were annealed in vacuum ambience at 350°C. The samples were characterised for their structural, optical, electrical, photoluminescence (PL) and surface morphological properties. The hexagonal wurtzite crystal structure of the films with the crystallites oriented along (002) plane was confirmed through X-ray diffraction profiles. The crystalline quality of the films is found to be deteriorated with the increase of F doping concentration but improved after vacuum annealing. The average optical transmittance is >85% in the visible region. The vacuum annealing reduced the resistivity of the films significantly and the lowest resistivity of 3.8 × 10 − 3 Ω cm is obtained for 5 at.-% of F doping.