Electrical Stabilities of In2O3-ZnO-SnO2 (IZTO) Films Against the External Stresses. (11th February 2016)

• Record Type: Journal Article
• Authors: Lee, Changhyun; Bae, Kang; Ha, Jaeyoung; Kim, Hwamin; Sohn, Sunyoung; Seo, Sungbo
• Is Part Of: Molecular crystals and liquid crystals. Volume 626(2016)
• Page Start: 246
• Page End: 253
• Publication Date: 2016-02-11
• Subjects: Thin Film -- Reactive Mode -- TCO -- Flexibility -- IZTO; Molecular crystals -- Periodicals; Liquid crystals -- Periodicals; Liquid crystals; Molecular crystals; Periodicals; 548
• DOI: 10.1080/15421406.2015.1076295
• Languages: English
• ISSNs: 1542-1406

Abstract

ABSTRACT: The (In2 O3 )77.34 (ZnO)x (SnO2 )22.66-x (denote to IZTO-2) films with x = 13, 15, 17, 19 wt.% were prepared on PET film with a 100-nm-thick SiO2 buffer layer by using RF-magnetron sputtering method, and their electrical stabilities were tested under various external stresses such as moist heat, temperature fluctuations and bending of substrate films. The lowest resistivity of 4.8 × 10 −4 Ωcm was observed in the IZTO-2 film of x = 17 wt.% which also had such good properties as high electrical stability, surface uniformity, and high conductivity as compared with those of another (In2 O3 )90 (ZnO)7 (SnO2 )3 (IZTO-1) film. These results suggest that the optimum starting composition for IZTO film with high quality as a flexible transparent conducting oxide(TCO) film is In2 O3 : ZnO : SnO2 = 77.34 : 17 : 5.66 wt.%. The electrical stability of the optimum IZTO-2 film was greatly improved because the SiO2 buffer layer introduced between IZTO thin film and PET substrate acted as a blocking barrier to water vapour and organic solvents diffusing from the PET film and also as a buffer layer withstanding the bending damage.