Cascade effects on the irradiation stability of amorphous SiOC. (1st February 2016)

• Record Type: Journal Article
• Authors: Su, Qing; Cui, Bai; Kirk, Marquis A.; Nastasi, Michael
• Is Part Of: Philosophical magazine letters. Volume 96:Number 2(2016)
• Page Start: 60
• Page End: 66
• Publication Date: 2016-02-01
• Subjects: Radiation damage -- radiation tolerant materials -- amorphous -- silicon oxycarbide; Condensed matter -- Periodicals; Physics -- Periodicals; Solid state physics -- Periodicals; Physique -- Périodiques; 530.41
• DOI: 10.1080/09500839.2016.1147655
• Languages: English
• ISSNs: 0950-0839

Abstract

Abstract: We studied the heavy ion radiation tolerance of amorphous silicon oxycarbide (SiOC) alloys by in situ Kr ion irradiation within a transmission electron microscopy. The amorphous SiOC thin films were grown via co-sputtering from SiO2 and SiC targets on a surface-oxidized Si (100) substrate. These films were irradiated by 1 MeV Kr ions at both room temperature and 300 °C with damage levels up to 5 displacements per atom (dpa). TEM characterization shows no sign of crystallization, void formation or segregation in all irradiated samples. Our findings suggest that SiOC alloys are a class of promising radiation tolerant materials.