Long-term metastability of light-induced defects in hydrogenated amorphous silicon. (3rd May 2016)

• Record Type: Journal Article
• Authors: Morigaki, Kazuo; Hikita, Harumi; Ogihara, Chisato
• Is Part Of: Philosophical magazine letters. Volume 96:Number 5(2016)
• Page Start: 183
• Page End: 188
• Publication Date: 2016-05-03
• Subjects: Amorphous silicon -- amorphous semiconductors -- amorphous network -- defects -- light-induced effects; Condensed matter -- Periodicals; Physics -- Periodicals; Solid state physics -- Periodicals; Physique -- Périodiques; 530.41
• DOI: 10.1080/09500839.2016.1184345
• Languages: English
• ISSNs: 0950-0839

Abstract

Abstract: The decay of the peak intensity of the electron spin resonance signal associated with light-induced dangling bonds in a-Si(H) has been measured at room temperature as a function of time during very long intervals such as 3400 days after the intense pulsed illumination was turned off. The decay curve is fitted by an exponential function with a decay constant of 393 days and reaches a steady-state value smaller than the value taken before illumination. Such a long-term metastability of light-induced dangling bonds in a-Si:H is discussed in terms of reconstruction of the amorphous network occurring through hydrogen motion.