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Ghosh, S. et al. (n.d.). On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs. Physica status solidi. 213 (6), pp. 1559-1563. [Online].
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Ghosh, S. et al. (n.d.). On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs. Physica status solidi. 213 (6), pp. 1559-1563. [Online].