Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene‐Random‐Mesh Carrier Pathways. (21st April 2016)

• Record Type: Journal Article
• Authors: Shin, Yong Seon; Kang, Won Tae; Kim, Young Rae; Won, Ui Yeon; Lee, Ki Young; Heo, Jin Seong; Park, Seong Jun; Lee, Young Hee; Yu, Woo Jong
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 6(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-04-21
• Subjects: graphene random mesh -- heterostructure transistors -- indium zinc oxide -- transparent transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500382
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off‐state leakage current in IZO/graphene.