On the Quantum Spin Hall Gap of Monolayer 1T′‐WTe2. Issue 24 (26th April 2016)

• Record Type: Journal Article
• Authors: Zheng, Feipeng; Cai, Chaoyi; Ge, Shaofeng; Zhang, Xuefeng; Liu, Xin; Lu, Hong; Zhang, Yudao; Qiu, Jun; Taniguchi, Takashi; Watanabe, Kenji; Jia, Shuang; Qi, Jingshan; Chen, Jian‐Hao; Sun, Dong; Feng, Ji
• Is Part Of: Advanced materials. Volume 28:Issue 24(2016)
• Page Start: 4845
• Page End: 4851
• Publication Date: 2016-04-26
• Subjects: density functional theory -- quantum spin Hall effect -- Schottcky junctions -- ultra‐fast spectroscopy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201600100
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Positive quantum spin Hall gap in mono­layer 1T ′‐WTe2 is consistently supported by density‐functional theory calculations, ultrafast pump–probe, and electrical transport measurements. It is argued that monolayer 1T′‐WTe2, which was predicted to be a semimetallic quantum spin Hall material, is likely a truly 2D quantum spin Hall insulator with a positive quantum spin Hall gap.