A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique. Issue 24 (23rd April 2016)

• Record Type: Journal Article
• Authors: Jo, Seo‐Hyeon; Kang, Dong‐Ho; Shim, Jaewoo; Jeon, Jaeho; Jeon, Min Hwan; Yoo, Gwangwe; Kim, Jinok; Lee, Jaehyeong; Yeom, Geun Young; Lee, Sungjoo; Yu, Hyun‐Yong; Choi, Changhwan; Park, Jin‐Hong
• Is Part Of: Advanced materials. Volume 28:Issue 24(2016)
• Page Start: 4824
• Page End: 4831
• Publication Date: 2016-04-23
• Subjects: nondegenerate doping -- photodetectors -- PPh3 -- type‐converted FET -- WSe2; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201600032
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The effects of triphenylphosphine (PPh3 )‐based n‐doping and hexagonal boron nitride ( h ‐BN) insertion on a tungsten diselenide (WSe2 ) photodetector are systematically studied, and a very high performance WSe2 / h ‐BN heterostucture‐based photodetector is demonstrated with a record photoresponsivity (1.27 × 10 6 A W −1 ) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.