Toward High‐Performance Top‐Gate Ultrathin HfS2 Field‐Effect Transistors by Interface Engineering. Issue 23 (27th April 2016)

• Record Type: Journal Article
• Authors: Xu, Kai; Huang, Yun; Chen, Bo; Xia, Yang; Lei, Wen; Wang, Zhenxing; Wang, Qisheng; Wang, Feng; Yin, Lei; He, Jun
• Is Part Of: Small. Volume 12:Issue 23(2016)
• Page Start: 3106
• Page End: 3111
• Publication Date: 2016-04-27
• Subjects: field‐effect transistors -- HfO2 -- HfS2 -- interface engineering; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201600521
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : Top‐gate HfS2 field‐effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, with on/off ratio of 10 5 and subthreshold swing of 95 mV dec −1 . Moreover, due to the self‐functionalization of HfS2, uniform and ultrathin HfO2 film free of pinhole‐like defects could be deposited on HfS2, which is dramatically different from other transition metal dichalcogenide FETs.