Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition. Issue 6 (3rd February 2016)

• Record Type: Journal Article
• Authors: Jiang, Jie; Lu, Yinmei; Kramm, Benedikt; Michel, Fabian; Reindl, Christian T.; Kracht, Max E.; Klar, Peter J.; Meyer, Bruno K.; Eickhoff, Martin
• Is Part Of: Physica status solidi. Volume 253:Issue 6(2016)
• Page Start: 1087
• Page End: 1092
• Publication Date: 2016-02-03
• Subjects: chemical composition -- chemical vapor deposition -- nitrogen -- SnO2 -- structure -- thin films; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201552747
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2 –x N x thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2– x N x films with increasing x are found by X‐ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X‐ray photoelectron spectroscopy, attributed to the N 3 − ion in the SnN bond. The increase of the N atomic concentration x in SnO2 –x N x films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.