Metal Based Nonvolatile Field‐Effect Transistors. (13th April 2016)

• Record Type: Journal Article
• Authors: Bi, Chong; Xu, Meng; Almasi, Hamid; Rosales, Macus; Wang, Weigang
• Is Part Of: Advanced functional materials. Volume 26:Number 20(2016)
• Page Start: 3490
• Page End: 3495
• Publication Date: 2016-04-13
• Subjects: metal–oxide transition -- nonvolatile transistors -- redox reaction -- resistive memory -- solid electrochemical reactions; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201600048
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field‐effect transistor (FET) structure, the redox reaction between Co metal and CoO x is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 10 5 . Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal–oxide transition may also be used for other energy storage applications. Abstract : The reversible metal–oxide transition induced by an electric field is demonstrated at a moderate temperature below 200 °C. The field‐effect transistors based on the metal–oxide transition are compatible with complementary metal oxide semiconductor technology and show nonvolatile behavior and a high on/off ratio of about 10 5 .