Resistive switching memory based on organic/inorganic hybrid perovskite materials. (August 2016)

• Record Type: Journal Article
• Authors: Liu, Yang; Li, Fushan; Chen, Zhixin; Guo, Tailiang; Wu, Chaoxing; Kim, Tae Whan
• Is Part Of: Vacuum. Volume 130(2016)
• Page Start: 109
• Page End: 112
• Publication Date: 2016-08
• Subjects: Perovskite -- Memory -- Resistive switching; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2016.05.010
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3 NH3 PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin-oxide (ITO)/PMMA/CH3 NH3 PbI3 /PMMA/Ag device were investigated in terms of current–voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10 3 . Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. Highlights: A resistance switching memory based on perovskites was fabricated. The perovskite film was grown using a two-step spin-coating procedure. The memory device is re-programmable and an ON/OFF ratio as large as 10 3 is obtained. The results suggest promising applications of OIHPs in nonvolatile flash memories.