Si/Sb superlattice-like thin films for ultrafast and low power phase change memory application. (August 2016)

• Record Type: Journal Article
• Authors: Zhu, Xiaoqin; Hu, Yifeng; Zou, Hua; Zhang, Jianhao; Sun, Yuemei; Wu, Weihua; Yuan, Li; Zhai, Liangjun; Song, Sannian; Song, Zhitang
• Is Part Of: Scripta materialia. Volume 121(2016)
• Page Start: 66
• Page End: 69
• Publication Date: 2016-08
• Subjects: Superlattice-like -- High speed -- Low power -- Phase change memory; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.04.043
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: After compositing with Si, the superlattice-like (SLL) Si/Sb thin film had higher crystallization temperature (~ 231 °C), larger crystallization activation energy (2.95 eV), and better data retention ability (126 °C for 10 years). The crystallization of Sb in SLL Si/Sb thin films was restrained by the multilayer interfaces. The reversible resistance transition could be achieved by an electric pulse as short as 10 ns for [Si(22 nm)/Sb(2 nm)]2 -based PCM cell. A lower operation power consumption of 0.02 mW and a good endurance of 1.0 × 10 5 cycles were achieved. In addition, SLL [Si(22 nm)/Sb(2 nm)]2 thin film showed a low thermal conductivity of 0.11 W/(m·K). Graphical abstract: After compositing with Si, the superlattice-like (SLL) Si/Sb thin film had higher crystallization temperature (~ 231 °C), larger crystallization activation energy (2.95 eV), and better data retention ability (126 °C for 10 years). The crystallization of Sb in SLL Si/Sb thin films was restrained by the multilayer interfaces. The reversible resistance transition could be achieved by an electric pulse as short as 10 ns for [Si(22 nm)/Sb(2 nm)]2 -based PCM cell. A lower operation power consumption of 0.02 mW and a good endurance of 1.0 × 10 5 cycles were achieved.