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HARVARD Citation
Hu, J. et al. (n.d.). Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers. Physica status solidi. 213 (5), pp. 1229-1235. [Online].
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Hu, J. et al. (n.d.). Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers. Physica status solidi. 213 (5), pp. 1229-1235. [Online].