A Novel Alkylated Indacenodithieno[3, 2‐b]thiophene‐Based Polymer for High‐Performance Field‐Effect Transistors. Issue 20 (30th October 2015)

• Record Type: Journal Article
• Authors: Zhang, Weimin; Han, Yang; Zhu, Xiuxiu; Fei, Zhuping; Feng, Yu; Treat, Neil D.; Faber, Hendrik; Stingelin, Natalie; McCulloch, Iain; Anthopoulos, Thomas D.; Heeney, Martin
• Is Part Of: Advanced materials. Volume 28:Issue 20(2016)
• Page Start: 3922
• Page End: 3927
• Publication Date: 2015-10-30
• Subjects: conjugated polymers -- interfacial layers -- organic semiconductors -- organic thin‐film transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201504092
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A novel rigid donor monomer, indacenodithieno[3, 2‐b]thiophene (IDTT ), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p‐type semiconductor, affording a mobility of 6.6 cm 2 V −1 s −1 in top‐gated field‐effect transistors with pentafluorobenzenethiol‐modified Au electrodes. Electrode treatment with solution‐deposited copper(I) thiocyanate (CuSCN) has a beneficial hole‐injection/electron‐blocking effect, further enhancing the mobility to 8.7 cm 2 V −1 s −1 .