Cite
HARVARD Citation
Takhar, K. et al. (2016). Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. Solid-state electronics. pp. 70-74. [Online].
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Takhar, K. et al. (2016). Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. Solid-state electronics. pp. 70-74. [Online].