In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films. (15th July 2016)

• Record Type: Journal Article
• Authors: Gerbig, Yvonne B.; Michaels, Chris A.; Cook, Robert F.
• Is Part Of: Scripta materialia. Volume 120(2016)
• Page Start: 19
• Page End: 22
• Publication Date: 2016-07-15
• Subjects: Raman spectroscopy -- Silicon -- Phase transitions -- Nanoindentation; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.04.007
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The pressure induced phase transitions of crystalline Si films were studied in situ under a Berkovich probe using a Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases. Graphical abstract: In-situ Raman mapping during loading segment of Berkovich indentations in silicon.