Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy. Issue 5 (18th January 2016)

• Record Type: Journal Article
• Authors: Kolhatkar, Gitanjali; Boucherif, Abderraouf; Ataellah Bioud, Youcef; Fafard, Simon; Ruediger, Andreas; Aimez, Vincent; Arès, Richard
• Is Part Of: Physica status solidi. Volume 253:Issue 5(2016)
• Page Start: 918
• Page End: 922
• Publication Date: 2016-01-18
• Subjects: AlGaNAs alloys -- annealing -- carrier density -- chemical beam epitaxy -- defects -- dilute nitrides -- mobility; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201552617
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05 Ga0.95 N0.005 As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm 2 V −1 s −1 for a hole concentration of 1 × 10 19 cm −3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.