Nitrogen Incorporated Ultrananocrystalline Diamond Microstructures From Bias‐Enhanced Microwave N2/CH4‐Plasma Chemical Vapor Deposition. Issue 4 (6th October 2015)

• Record Type: Journal Article
• Authors: Sankaran, Kamatchi Jothiramalingam; Huang, Bohr‐Ran; Saravanan, Adhimoorthy; Manoharan, Divinah; Tai, Nyan‐Hwa; Lin, I.‐Nan
• Is Part Of: Plasma processes and polymers. Volume 13:Issue 4(2016)
• Page Start: 419
• Page End: 428
• Publication Date: 2015-10-06
• Subjects: growth time -- negative bias -- nitrogen incorporated ultrananocrystalline diamond films -- microstructure -- multilayer graphene; Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201500079
• Languages: English
• ISSNs: 1612-8850

Abstract

Abstract : Microstructural evolution as a function of film thickness of nitrogen incorporated ultrananocrystalline diamond (NUNCD) films, grown using bias‐enhanced microwave plasma chemical vapor deposition with gas mixtures of N2 /CH4, is systematically investigated. It is observed that by controlling the growth time, the morphology, the microstructure, and the electrical properties of NUNCD films can be manipulated. The growth of NUNCD films starts with the formation of amorphous carbon on Si surface prior to the nucleation of diamond. In the growth time of 10 min, the films retain rod‐shaped diamond grains, whereas in the films grown for 30 min, needle‐like diamond grains are formed, which comprises a diamond core encased in a sheath of sp 2 ‐bonded graphite phase. On increasing the growth time to 60 min, the growth of acicular grains ceases and large proportion of graphite clusters or defective diamond clusters ( n ‐ diamond ) is formed. The salient features of such materials with unique granular structure are that their electrical properties can be tuned in wide range such that they are especially useful in practical applications. Abstract : High‐electrical conductivity and superior field emission properties of nitrogen incorporated ultrananocrystalline diamond films are achieved by the needle‐like diamond grains encased by sp 2 ‐bonded graphitic grain boundaries.