Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization. (September 2016)

• Record Type: Journal Article
• Authors: Nakata, Mitsuki; Toko, Kaoru; Saitoh, Noriyuki; Yoshizawa, Noriko; Suemasu, Takashi
• Is Part Of: Scripta materialia. Volume 122(2016)
• Page Start: 86
• Page End: 88
• Publication Date: 2016-09
• Subjects: Polycrystalline SiGe -- Thin films -- Crystal growth -- Catalysis -- Sputtering; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.05.025
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions. Here we demonstrate a large-grained (> 100 μm), 99% (111)-oriented Si0.4 Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4 Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays. Graphical abstract: Al-induced layer exchange allows for a 99% (111)-oriented SiGe thin film with an intermediate composition on a glass substrate. Slow annealing below 350 °C is a key for large-grain growth: it suppresses nucleation and facilitates lateral growth during the crystallization of the amorphous Si0.4 Ge0.6 alloy.