76‐2: Invited Paper: Amorphous Oxide Thin Film Transistors with Nitrogen‐doped Active Layers. Issue 1 (May 2016)

• Record Type: Journal Article
• Authors: Xie, Haiting; Wu, Qi; Xu, Ling; Xu, Jianeng; Zhang, Lei; Liu, Guochao; Dong, Chengyuan
• Is Part Of: Digest of technical papers. Volume 47:Issue 1(2016)
• Page Start: 1033
• Page End: 1036
• Publication Date: 2016-05
• Subjects: Amorphous oxide semiconductor (AOS) -- thin film transistors (TFTs) -- nitrogen-doping -- double-stacked channel layer (DSCL); Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10907
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with various nitrogen‐doped active layers were studied. Compared with the oxygen‐doping, the nitrogen‐doping technology could moderately rather than significantly suppress the oxygen vacancies in the channel. Importantly, the double‐stacked channel layers (DSCL) including different nitrogen‐doped AOS films were proposed and investigated, proving that the proper combination of the nitrogen doping and DSCL structure could effectively improve the electrical performance of AOS TFTs.