76‐3: Development of a Top‐Gate Transistor with Short Channel Length and C‐Axis‐Aligned Crystalline Indium‐Gallium‐Zinc‐Oxide for High‐Resolution Panels. Issue 1 (May 2016)

• Record Type: Journal Article
• Authors: Shima, Yukinori; Jincho, Masami; Hamochi, Takashi; Saito, Satoru; Dobashi, Masayoshi; Okazaki, Kenichi; Koezuka, Junichi; Matsuda, Shinpei; Tsubuku, Masashi; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 47:Issue 1(2016)
• Page Start: 1037
• Page End: 1040
• Publication Date: 2016-05
• Subjects: oxide semiconductor -- CAAC-OS -- LTPS -- TGSA -- high resolution panel; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10920
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.