P‐4: Electrical Characteristics of Dual‐Gate CAAC‐IGZO FET with Self‐Aligned Top Gate. Issue 1 (May 2016)

• Record Type: Journal Article
• Authors: Honda, Ryunosuke; Suzuki, Akio; Matsuda, Shinpei; Saito, Satoru; Shima, Yukinori; Koezuka, Junichi; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 47:Issue 1(2016)
• Page Start: 1132
• Page End: 1135
• Publication Date: 2016-05
• Subjects: CAAC-IGZO -- dual-gate structure -- self-aligned top gate -- selfheating -- liquid crystal display; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10821
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We fabricated dual‐gate CAAC‐IGZO FETs with self‐aligned top gates and investigated their electrical characteristics. The drain current was larger than expectedfrom the GI capacitance ratio to single‐gate FETs. Device simulation results suggest that shallow trap states and increase in electron mobility by self‐heating of FETs can explain the large drain current.