60‐2: A New Concept of In‐Ga‐Zn Oxide Composition for Fabricating High Mobility and Stability FETs. Issue 1 (May 2016)

• Record Type: Journal Article
• Authors: Ishihara, Noritaka; Tsutsui, Kazuhiro; Takasu, Takako; Tsubuku, Masashi; Yamazaki, Shunpei; Higano, Satoshi; Daisuke, Kurosaki; Shimomura, Akihisa
• Is Part Of: Digest of technical papers. Volume 47:Issue 1(2016)
• Page Start: 816
• Page End: 819
• Publication Date: 2016-05
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10798
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We used new In‐Ga‐Zn oxide composition (In:Ga:Zn = from 4:2:3 to 4:2:4.1) to fabricate bottom‐gate, top‐contact field‐effect transistors with high mobility and stability. Here we discuss these improvements in mobility and stability based on experiments and calculations. We succeeded in fabricating a 513‐ppi in‐cell‐type touch panel using this In‐Ga‐Zn oxide.