Cite
HARVARD Citation
Yang, J. et al. (2016). P‐9: High Performance Back Channel Etch Metal Oxide Thin‐film Transistor with Double Active Layers. Digest of technical papers. 47 (1), pp. 1151-1154. [Online].
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Yang, J. et al. (2016). P‐9: High Performance Back Channel Etch Metal Oxide Thin‐film Transistor with Double Active Layers. Digest of technical papers. 47 (1), pp. 1151-1154. [Online].