P‐10: Excellent Mechanical Bending Stability of Flexible a‐IGZO TFT by Dual Gate Dual Sweep Using TCAD Simulation. Issue 1 (May 2016)

• Record Type: Journal Article
• Authors: Billah, Mohammad Masum; Hasan, Md Mehedi; Chowdhury, Md Delwar Hossain; Jang, Jin
• Is Part Of: Digest of technical papers. Volume 47:Issue 1(2016)
• Page Start: 1155
• Page End: 1158
• Publication Date: 2016-05
• Subjects: Amorphous-indium-gallium-zinc-oxide (a-IGZO) -- thin-film transistor (TFT) -- tensile bending -- compressive bending -- single gate (SG) -- dual gate (DG) -- dual sweep (DS) -- technology computer aided design (TCAD); Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10842
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We report mechanical bending effect on electrical performance of flexible amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin film transistors (TFTs) using TCAD simulation. Tensile bending stress for a single gate (SG) TFT exhibits higher electron concentration and lower resistivity along the channel than those of flat and compressive geometries. The dual gate (DG) TFT with dual gate sweep (DS) shows increased conductivity and improved bending stability. These findings are an important step toward the realization of high performance DG flexible TFTs for future display applications.