46‐3: Piezoelectric Pressure Sensor using Top‐Gate Effect with Dual‐Gate a‐IGZO TFTs. Issue 1 (May 2016)

• Record Type: Journal Article
• Authors: Geng, Di; Han, Songyi; Seo, Heejae; Jang, Jin
• Is Part Of: Digest of technical papers. Volume 47:Issue 1(2016)
• Page Start: 625
• Page End: 628
• Publication Date: 2016-05
• Subjects: Piezoelectric -- P(VDF‐TrFE) -- dual‐gate a‐IGZO TFT -- pressure sensor; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10765
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : In this study, we proposed the pressure sensor using the P(VDF‐TrFE) based pizeo‐capacitor, integrated with a dual‐gate a‐IGZO TFT. The a‐IGZO TFTs are connected in an inverter configuration and the piezo‐capacitor was connected to the floating top gate of the driving TFT. The pressure sensor generates ~ 150 mV output signals and exhibits a high degree of conformability and thus can be a good candidate for smart sensor platforms.