Capacitance‐voltage characteristic of Ga‐ and N‐polar AlGaN/GaN HEMTs. Issue 5 (9th February 2016)

• Record Type: Journal Article
• Authors: Peng, Daqing; Li, Zhonghui; Li, Chuanhao; Zhang, Dongguo; Li, Liang; Dong, Xun; Pan, Lei; Luo, Weike
• Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 5/6(2016:May)
• Page Start: 317
• Page End: 320
• Publication Date: 2016-02-09
• Subjects: N‐polar -- HEMTs -- capacitance‐voltage; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510195
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Ga‐ and N‐polar AlGaN/GaN HEMTs were designed and epitaxially grown on Si‐ and C‐face SiC substrates by MOCVD. The Capacitance‐voltage characteristics of the two structures were investigated by C‐V profile and drift‐diffusion simulations. The N‐polar structure shows double channels, while the electron concentration in the second channel is one order of magnitude lower than that in the first channel. Energy band diagrams and charge distributions were studied. The second channel is formed in AlN/AlGaN interface with electrons spilling over from the first channel when adequate negative voltage was applied on the schottky contact. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)