Cite
HARVARD Citation
Saito, H. et al. (n.d.). 3.2 mΩcm2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V. Physica status solidi. 13 (5), pp. 332-335. [Online].
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Saito, H. et al. (n.d.). 3.2 mΩcm2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V. Physica status solidi. 13 (5), pp. 332-335. [Online].