Fabrication of GaN quantum dots using Ga droplet epitaxy and thermal annealing by metal organic chemical vapor deposition. Issue 5 (14th April 2016)

• Record Type: Journal Article
• Authors: Qi, Zhiqiang; Fang, Yanyan; Chen, Changqing; Dai, Jiangnan
• Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 5/6(2016:May)
• Page Start: 225
• Page End: 227
• Publication Date: 2016-04-14
• Subjects: GaN QDs -- Ga droplet -- thermal annealing -- MOC; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510154
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Optically active GaN quantum dots are grown by droplet heteroepitaxy and post‐growth annealing. The evolution of morphology and optical properties of thermal annealing GaN QDs have been investigated. The results show that thermal annealing under NH3 /N2 ambience is a necessary condition for maintaining the optimal QDs morphology and improving optical properties of GaN QDs. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)