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HARVARD Citation
Shi, Y. et al. (n.d.). Impact of interface traps on switching behavior of normally‐OFF AlGaN/GaN MOS‐HEMTs. Physica status solidi. 13 (5), pp. 328-331. [Online].
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Shi, Y. et al. (n.d.). Impact of interface traps on switching behavior of normally‐OFF AlGaN/GaN MOS‐HEMTs. Physica status solidi. 13 (5), pp. 328-331. [Online].