Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN: Mg cladding layer. Issue 5 (22nd December 2015)

• Record Type: Journal Article
• Authors: Tian, Aiqin; Liu, Jianping; Zhang, Liqun; Ikeda, Masao; Zhang, Shuming; Li, Deyao; Fan, Xiaowang; Zhou, Kun; Wen, Pengyan; Zhang, Feng; Yang, Hui
• Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 5/6(2016:May)
• Page Start: 245
• Page End: 247
• Publication Date: 2015-12-22
• Subjects: AlGaN: Mg -- carbon impurity -- resistivity -- green LD; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510186
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Electrical properties of Al0.07 Ga0.93 N: Mg samples with different carbon impurity concentrations were investigated by Hall measurements. By reducing carbon impurity concentration from 2×10 18 cm ‐3 to 5×10 16 cm ‐3, the resistivity of p‐Al0.07 Ga0.93 N decreases from 7.4 Ω·cm to 2.2 Ω·cm. By applying the growth conditions of low‐temperature AlGaN: Mg with low carbon incorporation to cladding layer of green LD structure, we have obtained green LDs with series resistance as low as 2.4 Ω and operation voltage of 4.9 V at 4 kA/cm 2 . The green LDs lased at 508 nm with a threshold current density of 8.5 kA/cm 2 and a slope efficiency of 0.22 W/A. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)