Two carrier localizations in GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence. Issue 5 (22nd December 2015)

• Record Type: Journal Article
• Authors: Wu, Feng; Li, Yang; Tian, Wu; Zhang, Jun; Wang, Shuai; Dai, Jiangnan; Feng, Zhe Chuan; Chen, Changqing
• Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 13:Issue 5/6(2016:May)
• Page Start: 239
• Page End: 241
• Publication Date: 2015-12-22
• Subjects: GaN/AlGaN multiquantum wells -- carrier localization -- photoluminescence -- carrier recombination; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510178
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Carrier localization effect has been observed in GaN/AlGaN multiquantum wells (MQWs) by analyzing the temperature dependent photoluminescence (PL) results. Specifically, two neighbouring peaks can be seen in the PL spectra with an abnormal variation when increasing the temperature. A conduction band model with two minimal potentials corresponding to two carrier localizations is proposed to explain the PL spectra. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)