Ternary Flexible Electro‐resistive Memory Device based on Small Molecules. Issue 10 (21st April 2016)

• Record Type: Journal Article
• Authors: Zhang, Qi‐jian; He, Jing‐hui; Zhuang, Hao; Li, Hua; Li, Na‐jun; Xu, Qing‐feng; Chen, Dong‐yun; Lu, Jian‐mei
• Is Part Of: Chemistry, an Asian journal. Volume 11:Issue 10(2016)
• Page Start: 1624
• Page End: 1630
• Publication Date: 2016-04-21
• Subjects: memory devices -- molecular stacking -- side chains -- ternary memory; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/asia.201600304
• Languages: English
• ISSNs: 1861-4728

Abstract

Abstract: Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever‐growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule‐based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties. Abstract : Give and take : A flexible ternary resistive memory device has been synthesized with 1, 5‐bis(( E )‐(4‐(dibutylamino)phenyl)‐diazenyl)anthracene‐9, 10‐dione (BAzoAN ), for the first time. This device maintains ternary memory behavior under different bending degrees up to 500 bending cycles under the maximum bending condition. Additionally, the length of side chains can greatly influence the memory effects and mechanical properties.