Back Cover: Correlation between diode polarization and resistive switching polarity in Pt/TiO2/Pt memristive device (Phys. Status Solidi RRL 5/2016). Issue 5 (20th May 2016)

• Record Type: Journal Article
• Authors: Gao, Ligang; Hoskins, Brian; Strukov, Dmitri
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-05-20
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201670731
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : No abstract is available for this article. Abstract : Resistive random access memories (RRAM) have attracted extensive attention due to promising applications in nonvolatile memories, programmable logic, hybrid circuits with CMOS, and neuromorphic computing. A deeper understanding of the resistive switching mechanism from the atomic scale point of view is helpful to overcome endurance and yield problem. For example, the forming polarity (and therefore its polarization) of a pristine device is critical for achieving good performance and high uniformity especially since it determines the nature of the conducting pathways in the switching layer. Ligang Gao et al. (pp.426–430 ) have investigated the correlation between diode polarization and resistive switching polarity in Pt/TiO2 /Pt RRAM devices. The experimental results revealed that the diode direction is reversible under current pulses with varying current amplitude. Moreover, only the polarized diode can be electroformed, while the non‐polar state inhibits field concentration at either end of the device, preventing the electroforming. Furthermore, the resistive switching polarity depends on the polarization of the stack prior to the forming process.