Thermal stability of PdGe films on Ge(100) substrate. (15th July 2016)

• Record Type: Journal Article
• Authors: Toinin, Jacques Perrin; Hoummada, Khalid; Bertoglio, Maxime; Portavoce, Alain
• Is Part Of: Scripta materialia. Volume 120(2016)
• Page Start: 45
• Page End: 48
• Publication Date: 2016-07-15
• Subjects: Thin film -- Ohmic contact -- Germanide -- Thermal stability -- Reactive-diffusion; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.04.012
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The thermal stability of PdGe on Ge(100) was investigated by scanning electron microscopy, X-ray diffraction and atom probe tomography. The initial PdGe film agglomerates when heated at high temperature (≥ 500 °C), forming spherical islands. This degradation is highly detrimental for PdGe ohmic contact fabrication in the Ge-based nano-electronics technology. However, capping the Pd layer with W before Pd-Ge reaction increases the thermal stability of the PdGe film up to 600 °C. In addition, the PdGe texture is modified if the sample is heated during Pd deposition, increasing the thermal stability of PdGe up to 700 °C with the W cap. Graphical abstract: