Efficient energy harvesting of a GaN p–n junction piezoelectric generator through suppressed internal field screening. Issue 15 (29th March 2016)

• Record Type: Journal Article
• Authors: Kang, Jin-Ho; Ebaid, Mohamed; Jeong, Dae Kyung; Lee, June Key; Ryu, Sang-Wan
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 15(2016)
• Page Start: 3337
• Page End: 3341
• Publication Date: 2016-03-29
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6tc00040a
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : A high-efficiency GaN-based thin film piezoelectric energy harvester was demonstrated by suppressed screening of a piezoelectric field with the aid of a p–n diode junction. Abstract : A high-efficiency GaN-based thin film piezoelectric energy harvester was demonstrated by suppressed screening of a piezoelectric field with the aid of a p–n diode junction. Piezoelectric field screening was effectively controlled by the deposition of highly resistive p-type GaN. The semi-intrinsic property of Mg-doped GaN and improved junction quality successfully suppressed internal screening, which resulted in a significantly enhanced output voltage up to 8.1 V and a maximum output current density of 3.0 μA cm −2 . The energy-harvesting capabilities of the device were evaluated by charging a commercial capacitor, and self-powered light-emitting diode operation was demonstrated using the fabricated generator.