Heterovalent Pb-substitution in ferroelectric bismuth silicate Bi2SiO5. Issue 15 (22nd March 2016)

• Record Type: Journal Article
• Authors: Taniguchi, Hiroki; Nakane, Tomohiro; Nagai, Takayuki; Moriyoshi, Chikako; Kuroiwa, Yoshihiro; Kuwabara, Akihide; Mizumaki, Masaichiro; Nitta, Kiyofumi; Okazaki, Ryuji; Terasaki, Ichiro
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 15(2016)
• Page Start: 3168
• Page End: 3174
• Publication Date: 2016-03-22
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6tc00584e
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Systematic tuning of the ferroelectric phase transition in Bi2 SiO5 was demonstrated using element substitution, where nominally heterovalent Pb was successfully substituted for Bi up to 20%. Abstract : Systematic tuning of the ferroelectric phase transition in Bi2 SiO5 was demonstrated using element substitution, where nominally heterovalent Pb was successfully substituted for Bi up to 20%. Comprehensive studies using powder X-ray diffraction analysis, dielectric measurements, X-ray absorption spectroscopy, and first-principles calculations revealed that charge compensation for heterovalent substitution was achieved via introduction of a considerable number of oxygen vacancies in Bi2 O2 layers, resulting in the nominal composition (Bi1− x 3+ Pb x 2+ )2 SiO5− x . The oxygen vacancies were found to induce local disordering of SiO4 tetrahedral chains, sandwiched between the Bi2 O2 layers, leading to a decrease in the ferroelectric phase transition temperature and broadening of the phase transition in Bi2 SiO5 .