Preparation of Sn-doped CuAlS2 films with an intermediate band and wide-spectrum solar response. Issue 47 (25th April 2016)

• Record Type: Journal Article
• Authors: Guo, Chenguang; Yang, Chongyin; Xie, Yian; Chen, Ping; Qin, Mingsheng; Huang, Rongtie; Huang, Fuqiang
• Is Part Of: RSC advances. Volume 6:Issue 47(2016)
• Page Start: 40806
• Page End: 40810
• Publication Date: 2016-04-25
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra00946h
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Doping Sn in CuAlS2 can introduce an intermediate band into the material, which effectively broadens the absorption spectra. Abstract : As a member of Cu-containing chalcopyrites, CuAlS2 is a promising candidate material for intermediate band solar cells (IBSCs). In this paper, the intermediate band mechanism of Sn doped CuAlS2 was investigated both theoretically and experimentally, and the two sub-bandgaps were measured to be 1.91 eV and 1.31 eV, respectively. A novel and convenient method of Electrophoretic Deposition (EPD) was utilized to prepare Sn doped CuAlS2 films. Due to the wide-spectrum of absorption introduced by the intermediate band, Sn doped CuAlS2 films showed better photoelectrochemical performance (PEC).