A novel porphyrin-containing polyimide for memory devices. Issue 16 (7th April 2016)

• Record Type: Journal Article
• Authors: Tsai, Ming-Chi; Wang, Chin-Li; Lin, Ching-Yao; Tsai, Chia-Liang; Yen, Hung-Ju; You, Huei-Chi; Liou, Guey-Sheng
• Is Part Of: Polymer chemistry. Volume 7:Issue 16(2016)
• Page Start: 2780
• Page End: 2784
• Publication Date: 2016-04-07
• Subjects: Polymers -- Periodicals; Macromolecules -- Periodicals; Polymerization -- Periodicals; 547.705
• DOI: 10.1039/c6py00158k
• Languages: English
• ISSNs: 1759-9954

Abstract

Abstract : A novel porphyrin-based polyimideZnPor-t-DSDA was synthesized for memory applications and exhibits symmetric biswitching characteristic with a short retention time due to the coplanar structure between donor and acceptor units. Abstract : We design a novel solution-processable polyimideZnPor-t-DSDA with porphyrin moiety (electron donor) and sulfone-containing phthalimide (electron acceptor) for polymer memory applications. The resulting memory device can be switched from low-conductivity (OFF) to high-conductivity (ON) by both positive and negative sweeps, exhibiting symmetry biswitching characteristic with a short retention time (30 s). On the basis of the simulation calculation, the coplanar structure between donor and acceptor units results in charge transferring easily back to its original state after being excited by an electric field.