Black phosphorus nonvolatile transistor memory. Issue 17 (14th April 2016)

• Record Type: Journal Article
• Authors: Lee, Dain; Choi, Yongsuk; Hwang, Euyheon; Kang, Moon Sung; Lee, Seungwoo; Cho, Jeong Ho
• Is Part Of: Nanoscale. Volume 8:Issue 17(2016)
• Page Start: 9107
• Page End: 9112
• Publication Date: 2016-04-14
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c6nr02078j
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. Abstract : We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10 4 s), and cyclic endurance (1000 cycles).