Flux growth and 266 nm generation of a GdAl3(BO3)4 crystal. Issue 16 (6th April 2016)

• Record Type: Journal Article
• Authors: Zhu, Yangyang; Yue, Yinchao; Tu, Heng; Zhao, Ying; Hu, Zhanggui
• Is Part Of: CrystEngComm. Volume 18:Issue 16(2016)
• Page Start: 2965
• Page End: 2968
• Publication Date: 2016-04-06
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c6ce00611f
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : The study focused on optimization of the growing conditions of GdAl3 (BO3 )4 (GAB). Abstract : The study focused on optimization of the growing conditions of GdAl3 (BO3 )4 (GAB). Using Al2 O3 –B2 O3 –Li2 O–NaF as a flux, inclusion-free GAB crystals with sizes up to 18 × 18 × 35 mm 3 were successfully grown using the top-seeded solution growth technique. The preparation of the starting materials, flux selection and optimization of the growing parameters are discussed in the study. Laser radiation at 266 nm was generated for the first time by a type I phase-matching GAB crystal.