Controlling nanowire nucleation and growth with a negative substrate bias. Issue 16 (1st April 2016)

• Record Type: Journal Article
• Authors: Ball, J.; Reehal, H. S.
• Is Part Of: CrystEngComm. Volume 18:Issue 16(2016)
• Page Start: 2913
• Page End: 2920
• Publication Date: 2016-04-01
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c6ce00403b
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Applying a voltage bias to silicon nanowires during growth can influence wire density, diameter and length. Abstract : The varied applications of silicon nanowires can influence the required wire density, diameter and length. We demonstrate the ability to control wire nucleation, diameter and length with the use of a negative substrate bias generated with the application of a RF signal in an electron cyclotron resonance chemical vapour deposition system. Growing nanowires from 0 V to −100 V bias we observe trends in the density, length and diameter in wires grown from two different thicknesses of Au. A model for the observed results is suggested.