Cite
HARVARD Citation
Bosi, M. et al. (2016). Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition. CrystEngComm. 18 (15), pp. 2770-2779. [Online].
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Bosi, M. et al. (2016). Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition. CrystEngComm. 18 (15), pp. 2770-2779. [Online].