Electrodeposition of crystalline silicon directly from silicon tetrachloride in ionic liquid at low temperature. Issue 15 (29th January 2016)

• Record Type: Journal Article
• Authors: Zhang, Junling; Chen, Shimou; Zhang, Haitao; Zhang, Suojiang; Yao, Xue; Shi, Zhaohui
• Is Part Of: RSC advances. Volume 6:Issue 15(2016)
• Page Start: 12061
• Page End: 12067
• Publication Date: 2016-01-29
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra23085c
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Crystalline silicon was fabricated directly from silicon tetrachloride in ionic liquid at low temperature of 100 °C. SEM, TEM and SEAD revealed that as-deposited crystalline Si with diamond cubic crystal structure. Abstract : Crystalline silicon (Si) is widely used in modern electronics. Si is commonly produced through a series of energy-intensive reactions (>700 °C). It is thus urgent and significant to explore more economically and environmentally-benign synthetic strategies for crystalline Si at low temperature. In this contribution, we report an efficient method to prepare crystalline Si from silicon tetrachloride at the low temperature of 100 °C with an ionic liquid (IL) as electrolyte. Physicochemical characterization revealed that as-deposited crystalline Si with a diamond cubic crystal structure exhibited a dominant (111)-orientation. Moreover, in-depth insights into the growth mechanism of crystalline Si was shed light upon herein. Furthermore, the smart electrodepositing platform of crystalline Si from ILs would open up a new avenue for low-temperature metallurgy of Si.